Abhinav Kranti

The primary focus of my research is nanoscale device/circuit design to assess the advantages and challenges of novel MOS devices and circuits for digital, analog and RF applications. Apart from advanced scalable MOSFETs, I have been involved in research activities on III-V HEMTs and Bipolar transistors. Over the years, I have developed strong collaborative links with leading research groups in Belgium, United Kingdom, Ireland and France. I work with them on several topics of mutual interest. 

International Technology Roadmap for Semiconductors (ITRS) shows that silicon feature sizes will continue to shrink, number of transistors in chips will increase, and performance requirements will become increasingly stringent. As new technologies evolve, TCAD techniques will remain essential for the design of high performance devices and circuits.

For a Ph.D. at IIT Indore, I would expect the candidate to work on various research problems during the course of his/her work. At the beginner level, I would work closely with the candidates so that they gain sufficient knowledge and skills to develop independent thought process for the next stage. Thereafter, I expect the candidate to be able to think and work  with a greater degree of confidence and independence. A strong interest in academic and research pursuits are highly desired to work with me.

Intelligent and motivated candidates capable of working on challenging research problems in the area of Solid-State Devices, Circuit Design, Biosensors, Dynamic Memories, and Nanotechnology, with CSIR-UGC Junior Research Fellowship (JRF) or any other equivalent Fellowship can apply anytime of the year.